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| PHOTODIODE Si photodiode S6337-01 Large area photodiode for UV to IR, precision photometry S6337-01 is a large area Si photodiode that features excellent spatial response uniformity over a wide range from UV to IR. S6337-01 will prove useful for precision photometry and as a standard detector for spectral response calibration. Features Applications l Large active area: 18 x 18 mm l Excellent uniformity even at wavelengths longer than l High UV sensitivity l Windowless package s Absolute maximum ratings (Ta=25 C) Parameter Reverse voltage Operating temperature Storage temperature Symbol VR Max. Topr Tstg 1000 nm l Precision photometry l Spectral response calibration l Analytical equipment l Trap detector Value 5 0 to +60 0 to +80 Unit V C C s Electrical and optical characteristics (Ta=25 C) Parameter Spectral response range Peak sensitivity wavelength Photo sensitivity Short circuit current Dark current Rise time Terminal capacitance Shunt resistance Uniformity * Symbol p S Isc ID tr Ct Rsh U Condition Min. 200 10 Typ. 190 to 1100 960 530 250 50 7 3.5 200 Max. 1000 0.5 Unit nm nm mA/W A pA s nF M % =p 100 lx, 2856 K VR=10 mV VR=0 V, RL=1 k, =660 nm VR=0 V, f=10 kHz VR=10 mV Within 80 % of active area =190 to 1100 nm s Sensitivity uniformity (typical example, =1100 nm) S6337-01 (18 x 18 mm) 120 (Ta=25 C, spot light size: 35 mm) S1337-1010BQ (10 x 10 mm) 120 (Ta=25 C, spot light size: 35 mm) RELATIVE SENSITIVITY (%) 80 RELATIVE SENSITIVITY (%) 100 100 UNIFORMITY=0.3 % 80 UNIFORMITY=5.6 % 60 60 40 40 20 20 0 -10 0 -8 -6 -4 -2 0 2 4 6 8 10 -6 -4 -2 0 2 4 6 POSITION ON ACTIVE AREA (mm) POSITION ON ACTIVE AREA (mm) KSPDB0177EA KSPDB0178EA * Uniformity = Rs/Rm Rs: Photo sensitivity at any point within 80 % of the active area Rm: Averaged photo sensitivity within 80 % of the active area Si photodiode s Spectral response 0.7 0.6 (Typ. Ta=25 C) 10 nA S6337-01 s Dark current vs. reverse voltage (Typ. Ta=25 C) PHOTO SENSITIVITY (A/W) QE=100% 0.4 0.3 0.2 0.1 0 190 DARK CURRENT 600 800 1000 0.5 1 nA 100 pA 10 pA 400 1 pA 0.01 0.1 1 10 WAVELENGTH (nm) KSPDB0167EA REVERSE VOLTAGE (V) KSPDB0166EA s Terminal capacitance vs. reverse voltage 10 nF (Typ. Ta=25 C, f=1 MHz) s Dimensional outline (unit: mm) 25.5 -0.6 3.4 18.0 +0 TERMINAL CAPACITANCE ACTIVE AREA 100 pF WIRE PROTECTION 1 10 WHITE CERAMIC REVERSE VOLTAGE (V) KSPDB0165EA 0.45 LEAD 1.75 5.0 (10) 10 pF 0.1 2.54 0.2 PHOTOSENSITIVE SURFACE 1.2 18.0 1 nF 25.5 - 0.6 KSPDA0128EA Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. (c)2004 Hamamatsu Photonics K.K. HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, http://www.hamamatsu.com U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvagen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 +0 Cat. No. KSPD1029E01 May 2004 DN |
Price & Availability of S6337-01
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